Abstract:
First evaluated for multi-level cell memory applications were amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor nonvolatile memory devices with an IGZO charge storage layer.
The original state (OS) of the pristine device can be switched to the programmed state (PS) after a positive gate voltage pulse (12 V for 10 ms) and to the erased state (ES) after a negative gate voltage pulse (-15 V for 10 ms).
Fowler-Nordheim tunneling of electrons from the channel to the charge storage layer under positive gate bias and inverse tunneling under negative gate bias was the writing mechanism. Electrical programmability and erasability were excellent.
After 100 programming/erasing cycles, the OS-PS memory window was 2.4 V and the OS-ES window was 2.66 V. PS and ES have 1.91 and 1.30 V memory windows relative to OS for 10 5 s retention.
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